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ZnTe epitaxial growth by remote plasma enhanced metal organic chemical vapor deposition

โœ Scribed by Daiji Noda; Toru Aoki; Yoichiro Nakanishi; Yoshinori Hatanaka


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
307 KB
Volume
51
Category
Article
ISSN
0042-207X

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The effects of hydrogen on GaN growth by remote plasma-enhanced metal-organic chemical vapor deposition (RPE-MOCVD) were investigated. Hydrogen addition changed the gas-phase reaction in the plasma and resulted in a Ga excess growth condition by scavenging activated nitrogen species, resulting in de