✦ LIBER ✦

Silicon epitaxial growth by plasma enhanced chemical vapor deposition from SiH4H2 at 165–350°C

✍ Scribed by Cheng-Hsien Chen; Tri-Rung Yew

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Luminescent silicon nanocrystal dots fab

✍ Hajime Shirai; Toru Tsukamoto; Ken-ichi Kurosaki 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 384 KB

Low-temperature epitaxial growth of undo

✍ J.C. Alonso; T. Oshima; A. Yamada; M. Konagai; K. Takahashi 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 612 KB

Process control by optical emission spec

✍ C. Barholm-Hansen; M.D. Bentzon; M.E. Vigild; E. Findeisen; R. Feidenhans'l; J. 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 560 KB

SiO2 prepared by remote plasma-enhanced

✍ A. Ortiz; C. Falcony; M. Farias; L. Cota-Araiza; G. Soto 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 526 KB