SiO2 prepared by remote plasma-enhanced chemical vapor deposition using SiCl4 and O2 at substrate temperatures of less than 200 °C

✍ Scribed by A. Ortiz; C. Falcony; M. Farias; L. Cota-Araiza; G. Soto

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 526 KB
• Volume: 206
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(91)90385-b