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ZnSe-based laser diodes: New approaches

✍ Scribed by Arne Gust; Carsten Kruse; Matthias Klude; Elena Roventa; Roland Kröger; Kathrin Sebald; Henning Lohmeyer; Bernd Brendemühl; Jürgen Gutowski; Detlef Hommel


Book ID
104557240
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
413 KB
Volume
2
Category
Article
ISSN
1862-6351

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## Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N, metastables in the A3C: state. The free-hole concentration of N-doped ZnSe is of the order of 10" cm-j at room temperature. Laser diode ac