ZnSe-based laser diodes and p-type doping of ZnSe

✍ Scribed by K. Ohkawa; A. Tsujimura; S. Hayashi; S. Yoshii; T. Mitsuyu

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 466 KB
• Volume: 185
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(93)90224-t

✦ Synopsis

Highly conductive

p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N, metastables in the A3C: state. The free-hole concentration of N-doped ZnSe is of the order of 10" cm-j at room temperature.

Laser diode action has been observed from ZnCdSe single quantum well structures grown on GaAs substrates without GaAs buffer layers. Coherent light was observed at 490-520 nm at 77 K. The minimum threshold current density was as low as 160 A/cm* under pulsed operation.