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ZnSe-Based Laser Diodes and LEDs Grown on ZnSe and GaAs Substrates

✍ Scribed by K. Ohkawa; M. Behringer; H. Wenisch; M. Fehrer; B. Jobst; D. Hommel; M. Kuttler; M. Strassburg; D. Bimberg; G. Bacher; D. Tönnies; A. Forchel

Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
336 KB
Volume
202
Category
Article
ISSN
0370-1972

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ZnSe-based laser diodes and p-type dopin
ZnSe-based laser diodes and p-type doping of ZnSe
✍ K. Ohkawa; A. Tsujimura; S. Hayashi; S. Yoshii; T. Mitsuyu 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 466 KB

## Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N, metastables in the A3C: state. The free-hole concentration of N-doped ZnSe is of the order of 10" cm-j at room temperature. Laser diode ac