Blue and green light-emitting diode structures grown by molecular beam epitaxy on ZnSe substrates
β Scribed by D. Eason; J. Ren; Z. Yu; C. Hughes; J.W. Cook Jr.; J.F. Schetzina; N.A. El-Masry; Gene Cantwell; William C. Harsh
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 629 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0022-0248
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Bright green and blue light emitting diodes have been developed based on ZnSSe : Te active layer, with high crystal quality and a close lattice-match to GaAs substrate. The green LEDs exhibit a fairly long lifetime (>2000 h) at room temperature, which is attributable to the crystal-hardening effect
MgSeTe/ZnTe superlattices were proposed as carrier-confinement layers for high-performance yellow-green light emitting diodes (LEDs) on ZnTe substrates for the first time. ZnCdTe/ZnTe LEDs consisting of ZnCdTe quantum well active and ZnTe cladding layers were fabricated by molecular beam epitaxy inc