Blue-green light-emitting diodes with p-ZnSSe highly doped with nitrogen grown by metalorganic molecular beam epitaxy and molecular beam epitaxy
β Scribed by M. Migita; A. Taike; M. Momose; J. Gotoh
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 442 KB
- Volume
- 138
- Category
- Article
- ISSN
- 0022-0248
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π SIMILAR VOLUMES
Bright green and blue light emitting diodes have been developed based on ZnSSe : Te active layer, with high crystal quality and a close lattice-match to GaAs substrate. The green LEDs exhibit a fairly long lifetime (>2000 h) at room temperature, which is attributable to the crystal-hardening effect
MgSeTe/ZnTe superlattices were proposed as carrier-confinement layers for high-performance yellow-green light emitting diodes (LEDs) on ZnTe substrates for the first time. ZnCdTe/ZnTe LEDs consisting of ZnCdTe quantum well active and ZnTe cladding layers were fabricated by molecular beam epitaxy inc