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Defect characterization of electrically degraded ZnSe based laser diodes

✍ Scribed by Kr�ger, R. ;Roventa, E. ;Gust, A. ;Ueta, A. ;Klude, M. ;Hommel, D. ;Ryder, P.

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
102 KB
Volume
201
Category
Article
ISSN
0031-8965

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## Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N, metastables in the A3C: state. The free-hole concentration of N-doped ZnSe is of the order of 10" cm-j at room temperature. Laser diode ac