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ZnSe-based laser diodes

✍ Scribed by J.M. DePuydt; M.A. Haase; J. Qiu; H. Cheng


Book ID
103169587
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
53 KB
Volume
117
Category
Article
ISSN
0022-0248

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## Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N, metastables in the A3C: state. The free-hole concentration of N-doped ZnSe is of the order of 10" cm-j at room temperature. Laser diode ac