𝔖 Bobbio Scriptorium
✦   LIBER   ✦

ZnO/p-Si heterojunction photodiode by sol–gel deposition of nanostructure n-ZnO film on p-Si substrate

✍ Scribed by Fahrettin Yakuphanoglu; Yasemin Caglar; Mujdat Caglar; Saliha Ilican


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
420 KB
Volume
13
Category
Article
ISSN
1369-8001

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Normal incidence p–i–n Ge heterojunction
✍ Zhiwen Zhou; Jingkai He; Ruichun Wang; Cheng Li; Jinzhong Yu 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 318 KB

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 °C without thermal annealing and allowing the integration w

Formation of Al–N co-doped p-ZnO/n-Si (1
✍ Manoj Kumar; Sang-Kyun Kim; Se-Young Choi 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 141 KB

Al-N) thin films were grown on n-Si (1 0 0) substrate by RF co-sputtering technique. As-grown ZnO:Al-N film exhibited n-type conductivity whereas on annealing in Ar ambient the conduction of ZnO:Al-N film changes to p-type, typically at 600 8C the high hole concentration of ZnO:Al-N co-doped film wa