A novel phenomenon: p-Type ZnO:Al films deposited on n-Si substrate
β Scribed by Hu-Jie Jin; Min-Jong Song; Choon-Bae Park
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 402 KB
- Volume
- 404
- Category
- Article
- ISSN
- 0921-4526
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π SIMILAR VOLUMES
Al-doped ZnO (ZnO:Al) thin films were deposited on Si substrates using the radio-frequency reactive magnetron sputtering technique. Effect of Al contents and annealing treatments on the structural and photoluminescence (PL) properties of ZnO films was investigated. The results showed that crystallin
Al and N codoped ZnO thin films were grown on n-Si (100) substrate by sputtering technique. Hall effect measurements of as-grown films exhibited n-type conduction, however 500 Β°C Ar annealed codoped films showed p-type conductivity with a hole concentration of 9.9 Γ 10 16 cm -3 , resistivity of 15.9