Induction of p-type conduction in sputtered deposited Al-N codoped ZnO thin films
β Scribed by Amit Kumar; Manoj Kumar; Beer Pal Singh
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 494 KB
- Volume
- 283
- Category
- Article
- ISSN
- 0030-4018
No coin nor oath required. For personal study only.
β¦ Synopsis
Al and N codoped ZnO thin films were grown on n-Si (100) substrate by sputtering technique. Hall effect measurements of as-grown films exhibited n-type conduction, however 500 Β°C Ar annealed codoped films showed p-type conductivity with a hole concentration of 9.9 Γ 10 16 cm -3 , resistivity of 15.95 Ξ©-cm and hole mobility of 3.95 cm 2 /Vs, respectively. Codoped ZnO thin films were found to be highly c-axis oriented with good crystal quality. A neutral acceptor-bound exciton and donor-acceptor-pair emissions that appeared at room temperature photoluminescence measurement verify p-type conduction in Al and N codoped ZnO film. The current-voltage characteristics of p-n heterojunction evidently showed a diode like rectifying behaviour.
π SIMILAR VOLUMES