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Formation of p-type ZnMgO thin films by In–N codoping method

✍ Scribed by L. Gong; Z.Z. Ye; J.G. Lu; L.P. Zhu; J.Y. Huang; B.H. Zhao


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
335 KB
Volume
256
Category
Article
ISSN
0169-4332

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Al and N codoped ZnO thin films were grown on n-Si (100) substrate by sputtering technique. Hall effect measurements of as-grown films exhibited n-type conduction, however 500 °C Ar annealed codoped films showed p-type conductivity with a hole concentration of 9.9 × 10 16 cm -3 , resistivity of 15.9