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The fabrication of both n-type and p-type GaAs thin films deposited by troide sputtering

✍ Scribed by D.M. Mosher; R.J. Soukup


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
741 KB
Volume
98
Category
Article
ISSN
0040-6090

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Al and N codoped ZnO thin films were grown on n-Si (100) substrate by sputtering technique. Hall effect measurements of as-grown films exhibited n-type conduction, however 500 Β°C Ar annealed codoped films showed p-type conductivity with a hole concentration of 9.9 Γ— 10 16 cm -3 , resistivity of 15.9