✦ LIBER ✦

Nanostructured surface morphology of ZnO grown on p-type GaN and Si by metal organic chemical vapor deposition

✍ Scribed by S.C. Hung; P.J. Huang; C.E. Chan; W.Y. Uen; F. Ren; S.J. Pearton; T.N. Yang; C.C. Chiang; S.M. Lan; G.C. Chi

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 577 KB
Volume: 255
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.08.086

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Fabrication of the hybrid ZnO LED struct

Fabrication of the hybrid ZnO LED structure grown on p-type GaN by metal organic chemical vapor deposition

✍ Dong Chan Kim; Won Suk Han; Bo Hyun Kong; Hyung Koun Cho; Chang Hee Hong 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 489 KB

Surface morphology and optical propertie

Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition

✍ S.C. Hung; P.J. Huang; C.E. Chan; W.Y. Uen; F. Ren; S.J. Pearton; T.N. Yang; C.C 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 528 KB

O 2 were 17 mmol/min and 1100 mmol/min, respectively. A low temperature ZnO buffer layer was deposited at 200 8C for 15 min, to thicknesses of 10-150 nm. ZnO epilayers were grown at

Surface morphology of cubic SiC(100) gro

Surface morphology of cubic SiC(100) grown on Si(100) by chemical vapor deposition

✍ Kentaro Shibahara; Shigehiro Nishino; Hiroyuki Matsunami 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 736 KB

Photoluminescence and Raman studies of C

Photoluminescence and Raman studies of CdS films grown by metal-organic chemical vapor deposition on Si{111} substrates

✍ Alok K. Berry; P.M. Amirtharaj; Jing-tong Du; Jack L. Boone; Don D. Martin 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 364 KB

Effect of Hydrogen on GaN Growth by Remo

Effect of Hydrogen on GaN Growth by Remote Plasma-Enhanced Metal-Organic Chemical Vapor Deposition

✍ Kim, Min Hong ;Kim, Hyun Jin ;Na, Hyun Seok ;Qi, Feng ;Yoon, Euijoon 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 231 KB 👁 2 views

The effects of hydrogen on GaN growth by remote plasma-enhanced metal-organic chemical vapor deposition (RPE-MOCVD) were investigated. Hydrogen addition changed the gas-phase reaction in the plasma and resulted in a Ga excess growth condition by scavenging activated nitrogen species, resulting in de

Study of the stacking faults in a-plane

Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal–organic chemical vapor deposition

✍ H. Fang; L.W. Sang; W.X. Zhu; H. Long; T.J. Yu; Z.J. Yang; G.Y. Zhang 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 596 KB

Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy