Fabrication of the hybrid ZnO LED structure grown on p-type GaN by metal organic chemical vapor deposition
β Scribed by Dong Chan Kim; Won Suk Han; Bo Hyun Kong; Hyung Koun Cho; Chang Hee Hong
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 489 KB
- Volume
- 401-402
- Category
- Article
- ISSN
- 0921-4526
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π SIMILAR VOLUMES
Electroluminescence (EL) measurements of nitride-rich GaN 1--x P x single quantum well (SQW) structures, grown using laser-assisted metalorganic chemical vapor deposition (LA-MOCVD), were performed. The maximum red shift of GaN 1--x P x to the GaN was 50 meV from the result of photoluminescence (PL)
Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy
O 2 were 17 mmol/min and 1100 mmol/min, respectively. A low temperature ZnO buffer layer was deposited at 200 8C for 15 min, to thicknesses of 10-150 nm. ZnO epilayers were grown at