XPS study of BN thin films deposited by CVD on SiC plane substrates

✍ Scribed by C. Guimon; D. Gonbeau; G. Pfister-Guillouzo; O. Dugne; A. Guette; R. Naslain; M. Lahaye

• Publisher: John Wiley and Sons
• Year: 1990
• Tongue: English
• Weight: 498 KB
• Volume: 16
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/sia.740160191

✦ Synopsis

Abstract

BN films deposited from a BF~3~NH~3~ precursor, under chemical vapour infiltration conditions, on plane sintered α‐SiC substrates were analysed by XPS. The films are non‐stoichiometric with an N/B atomic ratio of <1. They also contain significant amounts of oxygen atoms, homogeneously distributed in the film and thought to replace partly the nitrogen atoms in the turbostratic hexagonal network. As a result, ternary BN~x~O~y~ species are formed locally. Near the BN/SiC interface, the oxygen concentration increases owing to the occurrence of ternary SiN~x~O~y~ species, thought to be the result of an oxinitriding reaction on the substrate surface with the gas phase containing residual oxygen, at the very beginning of the BN deposition process.