Rutherford backscattering spectrometry in combination with channeling has been used to compare the ionirradiation-induced amorphisation of In 0.53 Ga 0.47 As with that of InAs and GaAs. In contrast to the well-known behaviour of Al x Ga 1Γx As, the ternary alloy In 0.53 Ga 0.47 As did not exhibit am
β¦ LIBER β¦
XPS data for sputter-cleaned In0.53Ga0.47As, GaAs, and InAs surfaces
β Scribed by Mathias Procop
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 720 KB
- Volume
- 59
- Category
- Article
- ISSN
- 0368-2048
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