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Auger electron spectroscopy study of cleaved and sputter-etched In0.53Ga0.47As surfaces

✍ Scribed by S. Valeri; A. Di Bona; E. Engeli; S. Bordiga; A. Piccirillo


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
520 KB
Volume
197
Category
Article
ISSN
0040-6090

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The magnetoresistance of antidot lattices and the magnetic field dependence of the threeterminal resistance of transverse electron focusing (TEF) devices is studied in a 2DEG in the lattice-matched In 0.53 Ga 0.47 As/InP heterojunction system, as a function of temperature. Ballistic effects are obse