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Structure of GaAs-In0.2Ga0.8As heterojunction interface studied by electron spectroscopies: X-ray photoelectron spectroscopy, tunable electron energy loss spectroscopy and Auger electron spectroscopy

✍ Scribed by M. Iwami; Y. Watanabe; H. Kato; M. Nakayama; N. Sano

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
364 KB
Volume
146
Category
Article
ISSN
0040-6090

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