Temperature dependence of relaxation times in electron focusing and antidot structures made from In0.53Ga0.47As/InP heterojunctions

✍ Scribed by J. Heremans; B.K. Fuller; C.M. Thrush; V. Bayot

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 89 KB
• Volume: 24
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0262

✦ Synopsis

The magnetoresistance of antidot lattices and the magnetic field dependence of the threeterminal resistance of transverse electron focusing (TEF) devices is studied in a 2DEG in the lattice-matched In 0.53 Ga 0.47 As/InP heterojunction system, as a function of temperature. Ballistic effects are observed in both types of mesoscopic devices at temperatures exceeding 100 K, and are considerably more robust than Shubnikov-de Haas (SdH) oscillations. Two effects influence the decay in the amplitude of the magnetoresistance peaks in the antidot structures, and of the focusing peaks in the TEF devices: the thermal smearing of the Fermi surface, and the increase in the electron scattering time with increasing temperature due to the increase in electron-phonon scattering. We deduce the temperature dependencies of the scattering times for the different geometries.