X-ray topography of epitaxially grown silicon layers
β Scribed by C. Szekely; L. Varga
- Publisher
- John Wiley and Sons
- Year
- 1970
- Tongue
- English
- Weight
- 259 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0232-1300
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At various stages of in situ therm31 oxiclztion of Si(lll) monocrystals, X-ray photoelectron spectroscopy (XPS or ESCA) t-eve& a shift in the silicon core-level binding energies which vties continuously from 2.4 to 4.2 eV. From the oxygen &d silicon ESCA peak intensities, these films un be said to h
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