𝔖 Bobbio Scriptorium
✦   LIBER   ✦

X-ray topography of epitaxially grown silicon layers

✍ Scribed by C. Szekely; L. Varga


Publisher
John Wiley and Sons
Year
1970
Tongue
English
Weight
259 KB
Volume
5
Category
Article
ISSN
0232-1300

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


X-ray characterization of thick GaN laye
✍ R. Korbutowicz; J. KozΕ‚owski; E. Dumiszewska; J. SerafiΕ„czuk πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 317 KB

## Abstract The crystallographic structures of the various Metalorganic Vapour Phase Epitaxy (MOVPE) thin GaN epitaxial layers deposited on (00.1) sapphire substrates are described and compared with the structural properties of the thick gallium nitride layers deposited by Hydride Vapour Phase Epit

X-ray photoelectron spectroscopy of ther
✍ G. Hollinger; Y. Jugnet; P. Pertosa; Tran Minh Duc πŸ“‚ Article πŸ“… 1975 πŸ› Elsevier Science 🌐 English βš– 426 KB

At various stages of in situ therm31 oxiclztion of Si(lll) monocrystals, X-ray photoelectron spectroscopy (XPS or ESCA) t-eve& a shift in the silicon core-level binding energies which vties continuously from 2.4 to 4.2 eV. From the oxygen &d silicon ESCA peak intensities, these films un be said to h

Intrinsic Defects of ZnS Epitaxial Layer
✍ K. Yoshino; H. Komaki; P. Prete; K. Ichino; A. Memon; M. Yoneta; H. Kobayashi; N πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 84 KB πŸ‘ 2 views