𝔖 Bobbio Scriptorium
✦   LIBER   ✦

X-ray topographic study of GaSb substrates for epitaxial layer growth

✍ Scribed by Dr. I. S. Vassilev; Dr. L. D. Pramatarova; Dr. M. B. Baeva


Publisher
John Wiley and Sons
Year
1988
Tongue
English
Weight
494 KB
Volume
23
Category
Article
ISSN
0232-1300

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Liquid phase epitaxy set-up designed for
✍ Th. Teubner; U. Jendritzki; K. BΓΆttcher; G. Schadow; R. Heimburger; A.-K. Gerlit πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 482 KB πŸ‘ 1 views

## Abstract In situ X‐ray examination at a synchrotron beamline of the solution growth of self‐assembled SiGe structures on silicon (001) substrates through the backside has been realized by a specific heating equipment and a suitable growth assembly. The furnace allows heating of the growth assemb

Oxidation of epitaxial Nb(110) films on
✍ O. Hellwig; G. Song; H. Zabel; H. W. Becker; A. Birkner πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 171 KB πŸ‘ 2 views

We studied the oxidation of epitaxial Nb(110) films on a-plane sapphire substrates at elevated temperatures with x-ray scattering techniques. Comparing atmospheric versus dry oxidation, we observe a different behaviour resulting in the formation of chemically and structurally different oxides. Under