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Preferred Crystallization of Epitaxially Grown Silicon on Boron-doped Silicon Substrates

✍ Scribed by Dr.; Ass. Professor Georgios Stergioudis


Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
267 KB
Volume
28
Category
Article
ISSN
0232-1300

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## Abstract A dislocation‐free silicon single crystal doped with 10^20^ cm^‐3^ germanium (Ge) has been grown using the Czochralski (CZ) growth technique. The Ge concentration in the seed‐end and tang‐end of the crystal was 8Γ—10^19^cm^‐3^and 1.6Γ—10^20^ cm^‐3^, respectively. The effective segregation