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X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses

✍ Scribed by V. V. Ratnikov; V. V. Mamutin; V. A. Vekshin; S. V. Ivanov


Book ID
110126863
Publisher
SP MAIK Nauka/Interperiodica
Year
2001
Tongue
English
Weight
73 KB
Volume
43
Category
Article
ISSN
1063-7834

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Infrared reflectivity spectra of GaAs/AlGaAs thick multiple heterostructures in the far-infrared range up to 450 cm\ have been investigated. A big influence of the buffer layer in the transparency region between the two 'Reststrahlen' bands, of GaAs and AlAs, is observed. It was shown that a simple