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Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy

✍ Scribed by H.Q. Huang; F.J. Liu; J. Sun; J.W. Zhao; Z.F. Hu; Z.J. Li; X.Q. Zhang; Y.S. Wang

No coin nor oath required. For personal study only.

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