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Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy

✍ Scribed by Huang, D.; Visconti, P.; Jones, K. M.; Reshchikov, M. A.; Yun, F.; Baski, A. A.; King, T.; MorkocÌ§, H.

Book ID: 121368012
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 462 KB
Volume: 78
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1380399

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