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Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy

✍ Scribed by L. K. Li; M. J. Jurkovic; W. I. Wang; J. M. Van Hove; P. P. Chow


Book ID
124171606
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
516 KB
Volume
76
Category
Article
ISSN
0003-6951

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## Abstract We use cathodoluminescence and Raman spectroscopy to investigate GaN layers grown by plasma‐assisted molecular beam epitaxy with different Bi fluxes. We find that the growth of GaN with an additional Bi flux favours the formation of submicron cubic domains, which results in layers with