✦ LIBER ✦

Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy

✍ Scribed by Kaschner, A.; Siegle, H.; Kaczmarczyk, G.; StraBburg, M.; Hoffmann, A.; Thomsen, C.; Birkle, U.; Einfeldt, S.; Hommel, D.

Book ID: 118165996
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 380 KB
Volume: 74
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.123320

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Mg doping of GaN by molecular beam epita

Mg doping of GaN by molecular beam epitaxy

✍ Lieten, R R; Motsnyi, V; Zhang, L; Cheng, K; Leys, M; Degroote, S; Buchowicz, G; 📂 Article 📅 2011 🏛 Institute of Physics 🌐 English ⚖ 452 KB

Optical and magnetic resonance studies o

Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

✍ E.R. Glaser; M. Murthy; J.A. Freitas Jr; D.F. Storm; L. Zhou; D.J. Smith 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 198 KB

Optical characterisation of Bi-doped GaN

Optical characterisation of Bi-doped GaN films grown by molecular beam epitaxy

✍ Ibáñez, J. ;Pastor, D. ;Cuscó, R. ;Artús, L. ;Avella, M. ;Jiménez, J. ;Novikov, 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 135 KB

## Abstract We use cathodoluminescence and Raman spectroscopy to investigate GaN layers grown by plasma‐assisted molecular beam epitaxy with different Bi fluxes. We find that the growth of GaN with an additional Bi flux favours the formation of submicron cubic domains, which results in layers with

Excitonic recombination in GaN grown by

Excitonic recombination in GaN grown by molecular beam epitaxy

✍ Smith, M.; Chen, G. D.; Li, J. Z.; Lin, J. Y.; Jiang, H. X.; Salvador, A.; Kim, 📂 Article 📅 1995 🏛 American Institute of Physics 🌐 English ⚖ 366 KB

Raman spectroscopic assessment of Si and

Raman spectroscopic assessment of Si and Be local vibrational modes in GaAs layers grown by molecular beam epitaxy

✍ Wagner, J.; Ramsteiner, M. 📂 Article 📅 1989 🏛 IEEE 🌐 English ⚖ 411 KB

Strain relaxation in AlN/GaN heterostruc

Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy

✍ Dimitrakopulos, G. P. ;Komninou, Ph. ;Kehagias, Th. ;Sahonta, S.-L. ;Kioseoglou, 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 384 KB

## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasma‐assisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between