𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Mg doping of GaN by molecular beam epitaxy

✍ Scribed by Lieten, R R; Motsnyi, V; Zhang, L; Cheng, K; Leys, M; Degroote, S; Buchowicz, G; Dubon, O; Borghs, G


Book ID
111674331
Publisher
Institute of Physics
Year
2011
Tongue
English
Weight
452 KB
Volume
44
Category
Article
ISSN
0022-3727

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Effect of growth conditions on the condu
✍ Simon, John ;Jena, Debdeep πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 439 KB

## Abstract The performance of III–V nitride heterostructure bipolar transistors has been limited by highly resistive p‐type layers, in addition to difficulties associated with a precise p–n junction placement at the emitter‐base heterojunction due to the Mg‐memory effect during growth by Metal‐Org