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The growth of heavily Mg-doped GaN thin film on Si substrate by molecular beam epitaxy

✍ Scribed by C.W. Chin; F.K. Yam; K.P. Beh; Z. Hassan; M.A. Ahmad; Y. Yusof; S.K. Mohd Bakhori


Book ID
113937122
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
566 KB
Volume
520
Category
Article
ISSN
0040-6090

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Growth and microstructure of MgO thin fi
✍ F Niu; B.H Hoerman; B.W Wessels πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 247 KB

MgO thin films have been grown on Si 100 substrates at low temperatures of 500-8508C by metal-organic molecular Ε½ . beam epitaxy MOMBE using the solid precursor magnesium acetylacetonate. Oxygen plasma is required to achieve Ε½ . deposition. The composition of the films was determined by Auger electr