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Growth and microstructure of MgO thin films on Si(100) substrates by metal–organic molecular beam epitaxy

✍ Scribed by F Niu; B.H Hoerman; B.W Wessels

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
247 KB
Volume
161
Category
Article
ISSN
0169-4332

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✦ Synopsis

MgO thin films have been grown on Si 100 substrates at low temperatures of 500-8508C by metal-organic molecular Ž . beam epitaxy MOMBE using the solid precursor magnesium acetylacetonate. Oxygen plasma is required to achieve Ž . deposition. The composition of the films was determined by Auger electron spectroscopy AES . The as-deposited films are w x phase-pure, stoichiometric, crystalline MgO with a 100 texture. Carbon contamination of the film resulting from precursor decomposition was not observed within detection limits. The deposition rate depended superlinearly on the plasma source power.

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✍ D.I. Westwood; D.A. Woolf; S.A. Clark; R.H. Williams 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 364 KB

Thick films of InxGa~\_xAs (x = 0.53 +\_0.04) have been grown on misoriented silicon substrates by molecular beam epitaxy as a function of substrate temperature and layer thickness. For films of 3 pm thickness, grown in the temperature range Tg = 200 to 550°C, the films became increasingly rough as