HfO 2 dielectric layers were grown on the p-type Si(1 0 0) substrate by metal-organic molecular beam epitaxy (MOMBE). Hafnium-tetrabutoxide [Hf(O•t-C 4 H 9 ) 4 ] was used as a Hf precursor and argon gas was used as a carrier gas. The microstructure and thickness of HfO 2 films were measured by scann
✦ LIBER ✦
Modeling growth rate of HfO2 thin films grown by metal–organic molecular beam epitaxy
✍ Scribed by Myoung-Seok Kim; Young-Don Ko; Tae-Houng Moon; Jae-Min Myoung; Ilgu Yun
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 665 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0026-2692
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