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Raman spectroscopic assessment of Si and Be local vibrational modes in GaAs layers grown by molecular beam epitaxy

✍ Scribed by Wagner, J.; Ramsteiner, M.


Book ID
117867529
Publisher
IEEE
Year
1989
Tongue
English
Weight
411 KB
Volume
25
Category
Article
ISSN
0018-9197

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The photoluminescence (PL) of undoped, Si-doped, and Be-doped GaAs nanowires (NWs) grown on Si substrates by molecular beam epitaxy was investigated. PL peaks of the undoped and Be-doped NWs were observed at higher energies than the bandgap energy of GaAs bulk. According to X-ray diffraction analysi