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Growth and optical studies of a GaAs epitaxial layer on porous Si(100) grown by molecular beam epitaxy

โœ Scribed by T. W. Kang; Y. T. Oh; J. Y. Leem; T. W. Kim

Publisher
Springer
Year
1992
Tongue
English
Weight
793 KB
Volume
11
Category
Article
ISSN
0261-8028

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โœ U. Rossow; T. Fieseler; D.R.T. Zahn; W. Richter; D.A. Woolf; D.I. Westwood; R.H. ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 282 KB

GaAs has been grown by molecular beam epitaxy on Si(lO0) using different substrate preparations, different conditions for the growth of a buffer layer and different thicknesses of the active layer. The quality of the layers is assessed by the direct interpretation of the pseudodielectric function ob