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Characteristics of GaN epilayer grown on Al2O3 with AlN buffer layer by molecular beam epitaxy

✍ Scribed by H.C. Jeon; H.S. Lee; S.M. Si; Y.S. Jeong; J.H. Na; Y.S. Park; T.W. Kang; Jae Eung Oh

Book ID: 108496987
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 166 KB
Volume: 3
Category: Article
ISSN: 1567-1739
DOI: 10.1016/s1567-1739(02)00143-8

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