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X-ray diffraction analysis of the defect structure in epitaxial GaN

✍ Scribed by Heinke, H.; Kirchner, V.; Einfeldt, S.; Hommel, D.


Book ID
120054385
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
52 KB
Volume
77
Category
Article
ISSN
0003-6951

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Analysis of the Defect Structure of Epit
✍ Heinke, H. ;Kirchner, V. ;Einfeldt, S. ;Hommel, D. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 140 KB πŸ‘ 2 views

The type and density of threading dislocations in GaN epitaxial layers grown on c-plane sapphire have been analyzed by using nondestructive high resolution X-ray diffraction. The highly distorted GaN layers were described as mosaic crystals characterized by a mean tilt and twist angle between the mo