Analysis of the Defect Structure of Epit
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Heinke, H. ;Kirchner, V. ;Einfeldt, S. ;Hommel, D.
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Article
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1999
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John Wiley and Sons
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English
β 140 KB
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The type and density of threading dislocations in GaN epitaxial layers grown on c-plane sapphire have been analyzed by using nondestructive high resolution X-ray diffraction. The highly distorted GaN layers were described as mosaic crystals characterized by a mean tilt and twist angle between the mo