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Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction

✍ Scribed by ZiLi Xie; YuanJun Zhou; LiHong Song; Bin Liu; XueMei Hua; XiangQian Xiu; Rong Zhang; YouDou Zheng


Book ID
107363586
Publisher
Science in China Press (SCP)
Year
2010
Tongue
English
Weight
670 KB
Volume
53
Category
Article
ISSN
1672-1799

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## Abstract A high resolution X‐ray diffraction method has been effectively used for the structural characterization of InP porous layers. It was revealed that strong diffuse scattering from pores around reciprocal lattice points does depend on the azimuth positions of samples. To extract structura