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Thermally Induced Strain in ZnSe and GaN Epitaxial Layers Studied by High-Resolution X-Ray Diffraction at Variable Temperatures

✍ Scribed by Heinke, H. ;Haase, L. ;Grossmann, V. ;Kirchner, V. ;Hommel, D.


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
118 KB
Volume
180
Category
Article
ISSN
0031-8965

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