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Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

✍ Scribed by Heying, B.; Wu, X. H.; Keller, S.; Li, Y.; Kapolnek, D.; Keller, B. P.; DenBaars, S. P.; Speck, J. S.

No coin nor oath required. For personal study only.

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