✦ LIBER ✦
Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction
✍ Scribed by YuChao Zhang; ZhiGang Xing; ZiGuang Ma; Yao Chen; GuoJian Ding; PeiQiang Xu; ChenMing Dong; Hong Chen; XiaoYun Le
- Book ID
- 107363627
- Publisher
- Science in China Press (SCP)
- Year
- 2010
- Tongue
- English
- Weight
- 796 KB
- Volume
- 53
- Category
- Article
- ISSN
- 1672-1799
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