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X-ray and RHEED Characterization of Ge Ions-Implanted Si Crystals Subjected to Pulsed-Laser Annealing

✍ Scribed by Prof. J. Auleytner; Dr. H. Fiedorowicz; Z. Furmanik; Dr. Z. Patron; Dr. K. Regiński

Publisher: John Wiley and Sons
Year: 1992
Tongue: English
Weight: 376 KB
Volume: 27
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.2170270715

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