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The Real Structure of Ge Ions-implanted Si Crystals Subjected to Thermal Annealing

✍ Scribed by Prof. J. Auleytner; Mgr. J. Adamczewska; Dr. K. Reginński

Publisher: John Wiley and Sons
Year: 1993
Tongue: English
Weight: 294 KB
Volume: 28
Category: Article
ISSN: 0232-1300
DOI: 10.1002/crat.2170280715

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