ChemInform Abstract: Wet Chemical Digita
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G. C. DESALVO; C. A. BOZADA; J. L. EBEL; D. C. LOOK; J. P. BARRETTE; C. L. A. CE
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Article
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2010
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John Wiley and Sons
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Wet Chemical Digital Etching of GaAs at Room Temperature. -The new title technique uses H2O2 to form an GaAs oxide layer in a self-limiting process at a constant layer thickness of β 15 . ANG. for soak times from 15 to 120 s. In a second step the oxide layer is removed by an acid (e.g. HCl) without