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Wet Chemical Digital Etching of GaAs at Room Temperature

✍ Scribed by DeSalvo, Gregory C.


Book ID
118046330
Publisher
The Electrochemical Society
Year
1996
Tongue
English
Weight
607 KB
Volume
143
Category
Article
ISSN
0013-4651

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ChemInform Abstract: Wet Chemical Digita
✍ G. C. DESALVO; C. A. BOZADA; J. L. EBEL; D. C. LOOK; J. P. BARRETTE; C. L. A. CE πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons βš– 29 KB πŸ‘ 2 views

Wet Chemical Digital Etching of GaAs at Room Temperature. -The new title technique uses H2O2 to form an GaAs oxide layer in a self-limiting process at a constant layer thickness of β‰ˆ 15 . ANG. for soak times from 15 to 120 s. In a second step the oxide layer is removed by an acid (e.g. HCl) without