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Temperature dependence of GaAs chemical etching using AsCl3

✍ Scribed by J.M. Ortion; Y. Cordier; J.Ch. Garcia; C. Grattepain

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
429 KB
Volume
164
Category
Article
ISSN
0022-0248

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Wet Chemical Digital Etching of GaAs at Room Temperature. -The new title technique uses H2O2 to form an GaAs oxide layer in a self-limiting process at a constant layer thickness of β‰ˆ 15 . ANG. for soak times from 15 to 120 s. In a second step the oxide layer is removed by an acid (e.g. HCl) without