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Low temperature etching of GaAs substrates and improved morphology of GaAs grown by metalorganic molecular beam epitaxy using trisdimethylaminoarsenic and triethylgallium

✍ Scribed by D. Marx; H. Asahi; X.F. Liu; M. Higashiwaki; A.B. Villaflor; K. Miki; K. Yamamoto; S. Gonda; S. Shimomura; S. Hiyamizu

No coin nor oath required. For personal study only.

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