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Metalorganic molecular beam epitaxy of cubic GaN on (100)GaAs substrates using triethylgallium and monomethylhydrazine

โœ Scribed by Harutoshi Tsuchiya; Atsushi Takeuchi; Megumu Kurihara; Fumio Hasegawa


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
493 KB
Volume
152
Category
Article
ISSN
0022-0248

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Selective Growth of Cubic GaN on Pattern
โœ Wu, Jun ;Kudo, M. ;Nagayama, A. ;Yaguchi, H. ;Onabe, K. ;Shiraki, Y. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 180 KB ๐Ÿ‘ 2 views

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl