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ChemInform Abstract: Wet Chemical Digital Etching of GaAs at Room Temperature.

✍ Scribed by G. C. DESALVO; C. A. BOZADA; J. L. EBEL; D. C. LOOK; J. P. BARRETTE; C. L. A. CERNY; R. W. DETTMER; J. K. GILLESPIE; C. K. HAVASY; T. J. JENKINS; K. NAKANO; C. I. PETTIFORD; T. K. QUACH; J. S. SEWELL; G. D. VIA

Publisher
John Wiley and Sons
Year
2010
Weight
29 KB
Volume
28
Category
Article
ISSN
0931-7597

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✦ Synopsis

Wet Chemical Digital Etching of GaAs at Room Temperature.

-The new title technique uses H2O2 to form an GaAs oxide layer in a self-limiting process at a constant layer thickness of β‰ˆ 15 . ANG. for soak times from 15 to 120 s. In a second step the oxide layer is removed by an acid (e.g. HCl) without affecting the unreacted GaAs semiconductor. These steps are repeated until the desired etch depth is achieved. -(DESALVO, G.

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