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Pressure and temperature dependence of silicon doping of GaAs using Si2H6 in metalorganic chemical vapour deposition

✍ Scribed by P.R. Hageman; M.H.J.M. de Croon; J.N.H. Reek; L.J. Giling


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
756 KB
Volume
116
Category
Article
ISSN
0022-0248

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Low-temperature metalorganic chemical va
✍ Shinji Fujieda; Masashi Mizuta; Yoshishige Matsumoto πŸ“‚ Article πŸ“… 1996 πŸ› John Wiley and Sons 🌐 English βš– 559 KB

Aluminium nitride (AIN) thin films have been grown by low-temperature metalorganic chemical vapour deposition (MOCVD) to passivate GaAs. By utilizing hydrazine (N2H4), highly resistive amorphous-like AIN films were obtained at growth temperatures around 400 "C. At the AIN-GaAs interface, three deep